IRF630NL International Rectifier, IRF630NL Datasheet - Page 2
![MOSFET N-CH 200V 9.3A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF630NL
Manufacturer Part Number
IRF630NL
Description
MOSFET N-CH 200V 9.3A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF630NSTRL.pdf
(12 pages)
Specifications of IRF630NL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF630NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF630NL
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF630NLPBF
Manufacturer:
CREE
Quantity:
10 000
Source-Drain Ratings and Characteristics
Thermal Resistance
IRF630N/S/L
Electrical Characteristics @ T
www.irf.com
R
R
R
R
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
L
L
DSS
GSS
S
SM
rr
on
d(on)
r
d(off)
f
fs
D
S
θJC
θCS
θJA
θJA
SD
(BR)DSS
GS(th)
DS(on)
g
gs
gd
iss
oss
rss
rr
(BR)DSS
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Parameter
Parameter
Parameter
J
= 25°C (unless otherwise specified)
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
4.9
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.26
–––
––– 0.30
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
575
–––
–––
–––
117
542
7.9
4.5
7.5
14
27
15
89
25
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
176
813
4.0
6.5
1.3
9.3
25
35
17
37
V/°C
µA
nA
nC
ns
nC
pF
nH
ns
Ω
V
V
V
S
Typ.
0.50
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 5.4A
= 5.4A
= 25°C, I
= 25°C, I
= 18Ω
= 13Ω
= 0V, I
= 10V, I
= V
= 50V, I
= 200V, V
= 160V, V
= 20V
= -20V
= 160V
= 10V
= 100V
= 0V
= 25V
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
Conditions
= 5.4A, V
= 5.4A
= 5.4A
= 250µA
= 5.4A
GS
GS
Max.
1.83
–––
62
40
= 0V
= 0V, T
D
= 1mA
GS
J
G
= 0V
= 150°C
G
Units
S
°C/W
+L
D
D
S
)
S
D
2