IRF5802 International Rectifier, IRF5802 Datasheet - Page 3

• Manufacturer Part Number: IRF5802
• Description: MOSFET N-CH 150V 900MA 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5802

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 88pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

www.irf.com
0.01
100
0.1
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
6
TOP
BOTTOM
V
V
DS
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
GS
, Drain-to-Source Voltage (V)
8
, Gate-to-Source Voltage (V)
T = 25 C
1
J
10
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
6.0V
DS
J
T = 150 C
J
10
= 50V
12
°
°
14
100
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
V
0.9A
DS
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
Vs. Temperature
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20
40
60
IRF5802
20µs PULSE WIDTH
T = 150 C
J
6.0V
80 100 120 140 160
10
°
V
°
GS
=
10V
100
3