IRLU3715 International Rectifier, IRLU3715 Datasheet - Page 4

• Manufacturer Part Number: IRLU3715
• Description: MOSFET N-CH 20V 54A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3715

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1060pF @ 10V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLU3715

IRLR/U3715
10000
4
1000
1000
100
0.1
100
10
10
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1

T = 175 C
Drain-to-Source Voltage
J
V
0.4
SD
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
Forward Voltage
0.8
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd

T = 25 C
J
1.2
Coss
°
Ciss
Crss
10
1.6
f = 1 MHZ

V
GS
2.0
SHORTED
= 0 V
2.4
100
1000
100
10
Fig 8. Maximum Safe Operating Area
14
12
10
1
8
6
4
2
0
0
Fig 6. Typical Gate Charge Vs.
1

I =
D
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
21A
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
5
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10

V
V
10
DS
DS

FOR TEST CIRCUIT
= 16V
= 10V
15
SEE FIGURE
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1msec
10msec
100µsec
20
13
100
25