IRF7706 International Rectifier, IRF7706 Datasheet - Page 2

• Manufacturer Part Number: IRF7706
• Description: MOSFET P-CH 30V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7706

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2211pF @ 25V
• Power - Max: 1.51W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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IRF7706
Source-Drain Ratings and Characteristics
Notes:
‚
Electrical Characteristics @ T
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
I
DSS
V
2
fs
SD
GSS
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Pulse width
(BR)DSS
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
–––
–––
–––
––– 0.015 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2211 –––
–––
–––
-30
6.9
ƒ
When mounted on 1 inch square copper board, t
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
244
122
339
207
32
8.5
8.4
34
48
17
46
-1.2
-2.5
–––
–––
100
–––
–––
366
183
–––
–––
-28
-15
-25
-1.5
51
48
22
36
72
25
69
V/°C
nC
m
µA
nA
nC
pF
ns
ns
V
V
V
S
A
p-n junction diode.
di/dt = -100A/µs
MOSFET symbol
showing the
integral reverse
T
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -7.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15
= 6.0
= V
= -10V, I
= -24V, V
= -24V, V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
‚
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.5A, V
= -1.5A
D
GS
GS
GS
= -250µA
= -7.0A
= -7.0A
= -5.6A
‚
= 0V
= 0V, T
= -10V
D
www.irf.com
= -1mA
‚
GS
‚
J
G
= 70°C
= 0V
10sec.
‚
S
D