IRF7526D1TR International Rectifier, IRF7526D1TR Datasheet - Page 2

• Manufacturer Part Number: IRF7526D1TR
• Description: MOSFET P-CH 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7526D1TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Maximum Ratings
IRF7526D1
MOSFET Electrical Characteristics @ T
Schottky Diode Electrical Specifications
I
I
R
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
V
I
C
dv/dt
I
F(av)
SM
DSS
S
d(on)
d(off)
f
SM
GSS
r
rr
RM
fs
DS(on)
GS(th)
SD
(BR)DSS
oss
FM
gd
iss
rss
t
g
gs
rr
2
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Parameter
Parameter
Parameter
Parameter
Max. Units
Max. Units
3600 V/µs
Min. Typ. Max. Units
0.94 –––
Min. Typ. Max. Units
0.62
0.57
0.06
120
0.50
0.39
-1.0
–––
–––
–––
–––
––– 0.17 0.20
––– 0.30 0.40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.9
1.3
-30
11
16
92
J
= 25°C (unless otherwise specified)
–––
–––
–––
180
–––
–––
––– -100
–––
––– -1.25
–––
7.5
1.3
2.5
9.7
9.3
mA
37
pF
12
19
87
42
30
A
A
V
-1.0
–––
–––
–––
-9.6
-1.2
–––
–––
–––
100
–––
–––
–––
–––
-25
1.9
3.7
11
55
45
See Fig. 14
50% Duty Cycle. Rectangular Wave, T
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
Rated V
I
I
I
I
V
V
F
F
F
F
R
R
= 1.0A, T
= 2.0A, T
= 1.0A, T
= 2.0A, T
= 30V
= 5Vdc ( 100kHz to 1 MHz) 25°C
nA
µA
nC
ns
nC
pF
ns
V
V
S
V
A
R
J
J
J
J
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
ƒ = 1.0MHz, See Fig. 5
T
di/dt = 100A/µs
V
R
V
T
Conditions
= 25°C
= 25°C
= 125°C
= 125°C .
D
D
T
T
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= -1.2A
= -1.2A
= 25°C, I
= 25°C, I
= 25°C
= 125°C
= 6.2
= 12
= 0V, I
= -10V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -24V
= -10V, See Fig. 6
= 0V
= -25V
= -4.5V, I
= -15V
Conditions
GS
Conditions
, I
D
S
F
D
= -250µA
D
D
Conditions
= -1.2A, V
= -1.2A
D
GS
GS
= -250µA
= -0.60A
= -1.2A
= -0.60A
= 0V
= 0V, T
with V
Following any rated
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T
GS
J
A
A
RRM
= 125°C
= 70°C
= 25°C
= 0V
applied