IRFL1006TR International Rectifier, IRFL1006TR Datasheet - Page 6

• Manufacturer Part Number: IRFL1006TR
• Description: MOSFET N-CH 60V 1.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL1006TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFL1006
6
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I
Fig 13a. Basic Gate Charge Waveform
A S
10 V
R G
2 0 V
V
V D S
G
t p
Q
GS
I A S
D .U .T
t p
0 .0 1
L
Q
Charge
Q
GD
G
V
1 5 V
(B R )D SS
D R IV E R
+
-
V D D
A
140
120
100
80
60
40
20
Fig 12c. Maximum Avalanche Energy
0
25
Fig 13b. Gate Charge Test Circuit
12V
Starting T , Junction Temperature ( C)
V
GS
Same Type as D.U.T.
50
Current Regulator
Vs. Drain Current
.2 F
J
50K
3mA
75
Current Sampling Resistors
.3 F
I
G
100
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
125
+
-
0.72A
V
°
1.0A
1.6A
I D
DS
150