IRF7233TR International Rectifier, IRF7233TR Datasheet

IRF7233TR

Manufacturer Part Number

IRF7233TR

Description

MOSFET P-CH 12V 9.5A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7233.pdf (7 pages)

Specifications of IRF7233TR

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

20 mOhm @ 9.5A, 4.5V

Drain To Source Voltage (vdss)

12V

Current - Continuous Drain (id) @ 25° C

9.5A

Vgs(th) (max) @ Id

600mV @ 250µA

Gate Charge (qg) @ Vgs

74nC @ 5V

Input Capacitance (ciss) @ Vds

6000pF @ 10V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7233TR

Manufacturer:

Quantity:

3 490

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7233TR

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7233TR

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7233TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 7
Download datasheet (93Kb)

Absolute Maximum Ratings

Thermal Resistance

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

www.irf.com

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

STG

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy„

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Power Dissipation

Parameter

@ -4.5V

T op V ie w

HEXFET

-55 to + 150

Max.

±9.5

±6.0

0.02

±76

± 12

-12

2.5

1.6

SO-8

IRF7233

DS(on)

Power MOSFET

DSS

= 0.020

PD- 91849D

= -12V

Units

W/°C

°C/W

°C

7/7/99

Related parts for IRF7233TR

IRF7233TR Summary of contents

Page 1

... Surface Mount Available in Tape & Reel l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized ...

Page 2

IRF7233 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I ...

Related keywords

irf720
irf7241
irf7233
irf723
irf7220
irf7207
irf7204
irf7201
irf7240
irf7210
irf7205
irf7240pbf
IRF7233TR datasheet
IRF7233TR data sheet
IRF7233TR pdf datasheet
IRF7233TR component
IRF7233TR part
IRF7233TR distributor
IRF7233TR RoHS
IRF7233TR datasheet download

IRF7233TR International Rectifier, IRF7233TR Datasheet

IRF7233TR

Specifications of IRF7233TR

Available stocks

Related parts for IRF7233TR

IRF7233TR Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Related keywords