IRF3707 International Rectifier, IRF3707 Datasheet - Page 2
IRF3707
Manufacturer Part Number
IRF3707
Description
MOSFET N-CH 30V 62A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3707S.pdf
(11 pages)
Specifications of IRF3707
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1990pF @ 15V
Power - Max
87W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3707
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF3707
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF3707L
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF3707PBF
Manufacturer:
IR
Quantity:
6 489
Company:
Part Number:
IRF3707STRR
Manufacturer:
IR
Quantity:
1 250
Part Number:
IRF3707STRRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF3707Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF3707ZCSPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF3707ZCSTRRP
Manufacturer:
IR
Quantity:
20 000
Diode Characteristics
IRF3707/3707S/3707L
Dynamic @ T
Avalanche Characteristics
t
Static @ T
d(off)
Symbol
E
I
Symbol
I
I
V
t
Q
t
Q
Symbol
g
Q
Q
Q
Q
t
t
t
C
C
C
V
R
V
I
AR
S
SM
I
d(on)
r
f
rr
rr
DSS
V
GSS
fs
SD
AS
(BR)DSS
GS(th)
iss
oss
rss
rr
rr
DS(on)
g
gs
gd
oss
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
–––
–––
––– 0.88
–––
–––
–––
–––
–––
37
30
0.027
1990 –––
11.8
12.6
–––
–––
–––
707
–––
–––
–––
–––
–––
––– -200
0.8
8.2
6.3
8.5
3.3
9.0
39
49
42
62
19
18
78
50
248
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12.5
100
200
1.3
3.0
59
74
63
93
27
–––
17
20
62
m
nC
nC
nC
ns
pF
ns
ns
V/°C Reference to 25°C, I
µA
nA
V
S
V
V
A
Typ.
–––
–––
MOSFET symbol
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
integral reverse
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
I
D
D
J
J
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
G
GS
GS
DS
= 24.8A
= 25°C, I
= 125°C, I
= 24.8A
= 25°C, I
= 125°C, I
= 1.8
= 15V, I
= 15V
= 15V
= V
= 24V, V
= 24V, V
= 4.5V
= 0V, V
= 15V
= 4.5V
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
GS
, I
D
S
F
DS
D
D
D
Conditions
S
F
D
= 250µA
= 31A, V
GS
GS
Conditions
= 31A, V
Conditions
= 250µA
= 49.6A
= 15A
= 31A, V
= 31A, V
= 12A
= 15V
Max.
213
= 0V
= 0V, T
62
D
www.irf.com
GS
R
= 1mA
=20V
GS
R
J
=20V
= 0V
= 125°C
G
= 0V
Units
mJ
A
S
D