IRF7534D1 International Rectifier, IRF7534D1 Datasheet

MOSFET P-CH 20V 4.3A MICRO8

IRF7534D1

Manufacturer Part Number
IRF7534D1
Description
MOSFET P-CH 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7534D1

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier’s low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
The Micro8
board space is at a premium. The low profile (<1.1mm) of the Micro8
fit easily into extremely thin application environments such as portable electronics
Absolute Maximum Ratings
Thermal Resistance
Notes:

ƒ
www.irf.com
V
I
I
I
P
P
V
dv/dt
T
R
D
D
DM
J
DS
D
D
GS
Micro8
Available in Tape & Reel
Trench technology
Co-packaged HEXFET
MOSFET and Schottky diode
MOSFET
@ T
@ T
JA
Ultra Low On-Resistance
, T
Pulse width
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
@T
@T
SD
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
STG
A
A
A
A
-1.2A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
TM
TM
package makes an ideal device for applications where printed circuit
Footprint
300µs – duty cycle
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Linear Derating Factor
100A/µs, V
Gate-to-Source Voltage
DD
®
Parameter
power
V
2%
(BR)DSS

, T
GS
GS
J
Max.
@ -4.5V
@ -4.5V
150°C
G
A
S
A
FETKY MOSFET & Schottky Diode
1
2
3
4
T op V ie w
TM
will allow it to
8
6
5
7
-55 to + 150
IRF7534D1
Units
100
Max.
1.25
K
K
D
D
-4.3
-3.4
-20
-34
0.8
1.1
10
± 12
Schottky Vf=0.39V
R
DS(on)
V
DSS
Micro8
= 0.055
= -20V
PD -93864
mW/°C
Units
°C/W
V/ns
°C
W
W
3/22/00
V
A
V
1

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IRF7534D1 Summary of contents

Page 1

... When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com FETKY MOSFET & Schottky Diode -4. -4.5V GS  „ „ ‚ Max. „ 150°C (BR)DSS -93864 IRF7534D1 -20V DSS 0.055 D DS(on Schottky Vf=0.39V Micro8 TM will allow it to Max. Units -20 -4.3 -3.4 -34 1.25 0.8 10 mW/°C ± ...

Page 2

... IRF7534D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = -15V 0.0 -60 -40 -20 4.0 5.0 Fig 4. Normalized On-Resistance IRF7534D1 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V -1.50V -1.50V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -4.3A ...

Page 4

... IRF7534D1 Power MOSFET Characteristics 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 C J ° 0.1 0.0 0.4 0.8 1.2 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... RESPONSE) 1 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 0.10 0.08 0.06 0.04 2 GS, Gate -to -Source Voltage (V) Fig 10. Typical On-Resistance Vs. Gate Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7534D1 -4.3A 3.0 4.0 5.0 Voltage thJA 100 5 6 ...

Page 6

... IRF7534D1 Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 Forw lta Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ° ° 5° 0.6 0 Fig.14 - Maximum Allowable Ambient J R Fig Typical Values of Reverse Current Vs. Reverse Voltage 00° hJA Sq uare wave ...

Page 7

... Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 0.08 (.003 Part Marking Information Micro8 PLE : 7501 www.irf.com 0.10 (.004 IRF7534D1 LIM .044 . .008 . .014 . .13 0. .95 3.05 e .025 SIC 0 .012 SIC 0 .120 2 .78 5.03 L .016 . 0° 6° 0° 6° ...

Page 8

... IRF7534D1 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & LIM LLIN ILLIM LIN -481 & -541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR JAPAN: K& ...

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