IRF3704 International Rectifier, IRF3704 Datasheet - Page 4
IRF3704
Manufacturer Part Number
IRF3704
Description
MOSFET N-CH 20V 77A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3704S.pdf
(11 pages)
Specifications of IRF3704
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1996pF @ 10V
Power - Max
87W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3704
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IRF3704/3704S/3704L
4
3000
2500
2000
1500
1000
1000
500
100
0.1
10
0
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175 C
J
Drain-to-Source Voltage
V
V
0.5
DS
SD
°
V
C
C
C
Forward Voltage
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
0.8
=
=
=
=
C oss
C iss
0V,
C
C
C
C rss
gs
gd
ds
T = 25 C
1.1
+ C
+ C
J
10
f = 1MHz
gd ,
gd
°
1.4
C
ds
V
SHORTED
GS
1.7
= 0 V
2.0
100
1000
10
100
8
6
4
2
0
10
1
0
0.1
Fig 8. Maximum Safe Operating Area
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
28.4A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
G
°
10
, Drain-to-Source Voltage (V)
1
BY R
20
DS(on)
V
DS
= 10V
10
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30
1 0us
1 00us
1 ms
1 0ms
40
100