IRFL1006 International Rectifier, IRFL1006 Datasheet - Page 2

• Manufacturer Part Number: IRFL1006
• Description: MOSFET N-CH 60V 1.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL1006

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL1006

Source-Drain Ratings and Characteristics
Notes:
IRFL1006
Electrical Characteristics @ T
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
SM
DSS
GSS
S
rr
on
d(on)
r
d(off)
f
V
fs
SD
2
Repetitive rating; pulse width limited by
(BR)DSS
GS(th)
rr
Starting T
DS(on)
iss
oss
rss
g
gs
gd
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
G
= 25 , I
/ T
J
J
= 25°C, L = 42 mH
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 1.6A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width
T
SD
––– 0.057 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
2.0
3.0
–––
–––
–––
–––
J
60
Intrinsic turn-on time is negligible (turn-on is dominated by L
150°C
1.6A, di/dt
–––
–––
–––
–––
––– 0.22
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
7.4
31
46
18
18
17
55
19
-100
300µs; duty cycle
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
1.3
6.4
4.0
8.0
1.7
3.3
1.6
68
47
25
260A/µs, V
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
p-n junction diode.
T
di/dt = 100A/µs
MOSFET symbol
showing the
integral reverse
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 1.6A
= 1.6A
= 25°C, I
= 25°C, I
= 49
= 19 , See Fig. 10
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 25V
= 0V, I
= 10V, I
= 10V, See Fig. 6 and 9
= 30V
= 0V
V
2%.
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
Conditions
= 250µA
GS
GS
= 1.6A
= 1.6A, V
= 250µA
,
= 1.6A
= 1.6A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V
S
+L
D
)