IRF7468 International Rectifier, IRF7468 Datasheet - Page 2

• Manufacturer Part Number: IRF7468
• Description: MOSFET N-CH 40V 9.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7468

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2460pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7468

Avalanche Characteristics
IRF7468
Dynamic @ T
Diode Characteristics
Static @ T
Symbol
E
I
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
V
V
R
V
I
AR
Symbol
I
I
t
Q
t
Q
I
d(on)
r
d(off)
f
SM
DSS
S
rr
rr
AS
V
GSS
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
DS(on)
g
gs
gd
oss
rr
rr
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Leakage Current
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
0.8
27
–––
–––
––– 0.81
––– 0.65 –––
–––
–––
40
–––
–––
0.025
2460 –––
18.0 35.0
11.7 15.5
13.0 17.0
–––
–––
490
–––
–––
–––
–––
––– -200
–––
–––
110
6.4
6.7
7.6
2.3
3.8
23
17
20
38
45
76
58
–––
–––
–––
–––
–––
–––
–––
110
160
–––
100
200
2.0
9.6
1.3
34
10
26
–––
20
2.3
68
87
74
m
µA
nC
ns
nC
nC
V/°C
nA
pF
ns
ns
S
Typ.
V
V
V
A
–––
–––
I
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
MOSFET symbol
integral reverse
D
D
Reference to 25°C, I
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
G
GS
GS
DS
J
J
J
J
= 8.0A
= 8.0A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= 20V, I
= 20V
= 20V
= V
= 32V, V
= 32V, V
= 4.5V,
= 0V, V
= 20V
= 4.5V
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= 4.5V, I
= 12V
= -12V
GS
, I
D
S
F
DS
D
D
D
Conditions
D
D
S
F
= 250µA
GS
GS
Conditions
Conditions
= 8.0A, V
= 8.0A, V
= 250µA
= 8.0A
= 9.4A
= 8.0A, V
= 8.0A, V
= 7.5A
= 4.7A
= 16V
Max.
160
8.0
= 0V
= 0V, T
www.irf.com
D
GS
R
= 1mA
J
GS
=20V
R
= 125°C
=20V
G
= 0V
= 0V
Units
mJ
A
D
S