IRF7459 International Rectifier, IRF7459 Datasheet - Page 2

• Manufacturer Part Number: IRF7459
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7459

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2480pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7459

Diode Characteristics
IRF7459
Avalanche Characteristics
Dynamic @ T
Static @ T
E
I
V
Symbol
I
I
t
Q
t
Q
V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
I
I
AR
S
SM
rr
rr
d(on)
d(off)
DSS
r
f
GSS
V
SD
fs
AS
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
rr
rr
2
g
gs
gd
oss
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
0.6
Min. Typ. Max. Units
–––
–––
––– 0.84
––– 0.69
–––
–––
–––
–––
20
32
0.024 –––
2480 –––
1030 –––
–––
–––
–––
–––
–––
–––
–––
––– -200
–––
130
6.7
8.0
6.6
6.3
4.5
5.0
70
70
70
75
11
23
17
10
20
100
–––
105
105
105
113
–––
100
200
–––
–––
–––
–––
–––
–––
2.0
1.3
9.0
9.5
2.5
22
20
35
10
26
11
V/°C
m
nC
nC
µA
nA
nC
ns
ns
ns
pF
V
V
V
S
A
Typ.
–––
–––
V
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
Reference to 25°C, I
I
D
D
J
J
J
J
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
G
= 9.6A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 9.6A
= 1.8
= V
= 16V, V
= 16V, V
= 16V, I
= 10V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
= 4.5V ƒ
= 0V, V
= 10V,
= 4.5V
= 0V
GS
, I
D
S
F
D
D
D
Conditions
DS
S
D
D
F
= 250µA
GS
GS
= 9.6A, V
Conditions
Conditions
= 9.6A, V
ƒ
= 250µA
= 12A ƒ
= 9.6A
= 9.6A, V
= 9.6A, V
= 9.6A
= 6.0A
Max.
= 10V
290
= 0V
= 0V, T
12
D
www.irf.com
= 1mA
GS
R
J
ƒ
ƒ
GS
= 15V
R
= 125°C
=15V
G
= 0V ƒ
= 0V
Units
mJ
A
S
D