IRF7457 International Rectifier, IRF7457 Datasheet - Page 4
![MOSFET N-CH 20V 15A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7457
Manufacturer Part Number
IRF7457
Description
MOSFET N-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7457.pdf
(8 pages)
Specifications of IRF7457
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 4.5V
Input Capacitance (ciss) @ Vds
3100pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7457
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7457PBF
Manufacturer:
IR
Quantity:
5 054
Company:
Part Number:
IRF7457TR
Manufacturer:
ST-ERICSSON
Quantity:
12 000
Part Number:
IRF7457TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7457TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7457
4
5000
4000
3000
2000
1000
1000
0
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
1
Fig 7. Typical Source-Drain Diode
0.2
Drain-to-Source Voltage
T = 150 C
J
V
DS
V
SD
V
C
C
C
Forward Voltage
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
°
,Source-to-Drain Voltage (V)
=
=
=
=
C
C
C
0V,
C
C
C
iss
oss
T = 25 C
rss
gs
gd
ds
J
+ C
+ C
10
1.4
°
f = 1MHz
gd ,
gd
C
ds
2.0
SHORTED
V
GS
= 0 V
100
2.6
1000
100
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
12A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
10
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
DS
= 10V
40
10
www.irf.com
10us
100us
1ms
10ms
50
100
60