IRF7521D1 International Rectifier, IRF7521D1 Datasheet - Page 4
![MOSFET N-CH 20V 2.4A MICRO-8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7521D1
Manufacturer Part Number
IRF7521D1
Description
MOSFET N-CH 20V 2.4A MICRO-8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7521D1.pdf
(8 pages)
Specifications of IRF7521D1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7521D1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7521D1TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7521D1TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7521D1
4
1 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
0.1
1 0
0
1
0.4
Fig 7. Typical Source-Drain Diode
1
T = 1 50 °C
J
Fig 5. Typical Capacitance Vs.
C
C
C
0.6
V
iss
oss
rss
V
D S
S D
Forward Voltage
V
C
C
C
, D rain-to-S ourc e V oltage (V )
, S ourc e-to-D rain V oltage (V )
G S
is s
rs s
o ss
Drain-to-Source Voltage
0.8
= 0V ,
= C
= C
= C
T = 25 °C
J
g s
d s
g d
1.0
+ C
+ C
1 0
g d
gd
f = 1M H z
1.2
, C
Power Mosfet Characteristics
d s
1.4
S H O R T E D
V
G S
1.6
= 0V
1 0 0
1.8
A
A
1 0 0
0.1
1 0
1 0
1
8
6
4
2
0
0.1
0
Fig 8. Maximum Safe Operating Area
T
T
S ing le P u lse
I
V
D
A
J
D S
= 1 .7A
Fig 6. Typical Gate Charge Vs.
= 25 °C
= 15 0°C
= 16 V
O P E R A TIO N IN TH IS A R E A L IM ITE D
V
D S
Q , Total G ate C harge (nC )
2
G
, D rain-to-S ource V oltage (V )
Gate-to-Source Voltage
1
B Y R
4
D S (o n)
FO R TE S T CIR C U IT
6
S E E FIG U R E 9
1 0
www.irf.com
1 0 0 µ s
1 0 m s
1 m s
8
1 0 0
1 0
A
A