IRLMS2002 International Rectifier, IRLMS2002 Datasheet - Page 4

• Manufacturer Part Number: IRLMS2002
• Description: MOSFET N-CH 20V 6.5A TSOP-6
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS2002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 1310pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
100
0.1
10
2000
1600
1200
1
800
400
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 150 C
1
J
Drain-to-Source Voltage
V
SD
V
°
0.6
DS
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
J
=
=
=
=
C oss
C rss
C iss
0V,
C
C
C
gs
gd
ds
0.8
°
+ C
+ C
10
f = 1MHz
gd ,
gd
C
1.0
ds
V
GS
SHORTED
= 0 V
1.2
100
100
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
5.3A
V
DS
4
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
8
BY R
12
DS(on)
V
DS
www.irf.com
10
= 10V
16
1ms
10ms
20
100
24