IRLMS6802TR International Rectifier, IRLMS6802TR Datasheet

MOSFET P-CH 20V 5.6A 6-TSOP

IRLMS6802TR

Manufacturer Part Number
IRLMS6802TR
Description
MOSFET P-CH 20V 5.6A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLMS6802TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 5.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 5V
Input Capacitance (ciss) @ Vds
1079pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLMS6802TR
IRLMS6802
IRLMS6802CT

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Price
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l
l
l
l
Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6
produces a HEXFET power MOSFET with R
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and R
enables a current-handling increase of nearly 300%
compared to the SOT-23.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
package with its customized leadframe
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
DS(on)
GS
GS
ƒ
DS(on)
@ -4.5V
@ -4.5V
reduction
60%
G
D
D
1
3
2
Top View
HEXFET
6
5
4
-55 to + 150
IRLMS6802
Max.
Max.
0.016
62.5
-5.6
-4.5
D
S
± 12
D
-20
-45
A
Micro6ä
2.0
1.3
31
®
R
DS(on)
Power MOSFET
V
DSS
= 0.050
= -20V
PD- 91848E
Units
Units
W/°C
°C/W
mJ
°C
01/13/03
V
A
V
1

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IRLMS6802TR Summary of contents

Page 1

... Surface Mount Available in Tape & Reel l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 10 1 -1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° T ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

3.00 (.118 ) -B- 2.80 (.111 ) 1.75 (.068 ) 3.00 (.118 ) 1.50 (.060 ) 2.60 (.103 ) - 0.95 ( .0375 ) 0.50 (.019 ) 6X 2X 0.35 (.014 ) 0.15 (.006 ...

Page 7

Notes: This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRLMS6702 PART NUMBER WAFER L OT NUMBER CODE PART NUMBER CODE REFERENCE IRLMS 1902 2B = IRLMS 1503 2C = IRLMS 6702 2D ...

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