IRLML5103TR International Rectifier, IRLML5103TR Datasheet - Page 4

• Manufacturer Part Number: IRLML5103TR
• Description: MOSFET P-CH 30V 760MA SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML5103TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 760mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 75pF @ 25V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML5103TR; IRLML5103; IRLML5103; IRLML5103CT

0.1
10
140
120
100
1
80
60
40
20
0.4
0
1
T = 150°C
C
C
C
J
-V
0.6
-V
iss
oss
rss
SD
DS
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
= 0V,
= C
= C
= C
gs
gd
ds
T = 25°C
1.0
J
+ C
+ C
10
gd
gd
f = 1MHz
, C
1.2
ds
SHORTED
V
1.4
GS
= 0V
1.6
100
A
A
0.1
20
16
12
10
1
8
4
0
0.0
1
T
T
Single Pulse
I
D
A
J
= -0.60A
= 25°C
= 150°C
-V
OPERATION IN THIS AREA LIMITED
1.0
DS
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
2.0
V
V
BY R
DS
DS
10
= -24V
= -15V
DS(on)
FOR TEST CIRCUIT
3.0
SEE FIGURE 9
100µs
1ms
10ms
4.0
100
5.0
A
A