SI4435DY International Rectifier, SI4435DY Datasheet - Page 5

• Manufacturer Part Number: SI4435DY
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4435DY

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0.01
100
8.0
6.0
4.0
2.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
-0.10
-0.20
-0.30
-0.40
0.20
0.10
0.00
0.1
-50
Fig 10. Typical Vgs(th) Variance Vs.
-25
1. Duty factor D = t / t
2. Peak T = P
Notes:
Juction Temperature
0
T J , Temperature ( °C )
1
J
25
DM
x Z
50
Si4435DY
1
thJA
P
2
DM
75
Id = -250µA
+ T
10
A
t
1
100
t
2
125
5
100
150