IRL520NS International Rectifier, IRL520NS Datasheet
IRL520NS
Specifications of IRL520NS
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IRL520NS Summary of contents
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... Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...
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... IRL520NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 3. Typical Transfer Characteristics TOP BOTTOM Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0 -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance IRL520NS/L VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2 0µ ° rain-to-S ource V oltage ( Vs. Temperature A A ...
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... IRL520NS iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° 0.1 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs ing lse 0.1 1 1.2 1.4 Fig 8. Maximum Safe Operating Area = 6 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRL520NS D.U. 5.0V µ d(off ...
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... IRL520NS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 0. (BR)DSS Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit tarting unc tion T em perature (° Vs. Drain Current Current Regulator Same Type as D ...
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... Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRL520NS/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V ...
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... IRL520NS Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking Information 2 D Pak TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 IRL520NS/L ...
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... IRL520NS/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...