IRL3502 International Rectifier, IRL3502 Datasheet - Page 2

• Manufacturer Part Number: IRL3502
• Description: MOSFET N-CH 20V 110A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3502

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 64A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3502

IRL3502
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
R
L
V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
I
SM
DSS
S
rr
on
d(on)
r
d(off)
f
GSS
D
V
S
DS(on)
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
T
R
max. junction temperature.
(BR)DSS
Starting T
SD
J
G
= 25 , I
150°C
64A, di/dt
/ T
J
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 190µH
AS
Drain-to-Source Leakage Current
Internal Source Inductance
= 64A.
86A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
Pulse width
Calculated continuous current based on maximum allowable
0.70
package refer to Design Tip # 93-4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
junction temperature; for recommended current-handling of the
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
20
77
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.019 –––
4700 –––
1900 –––
4.5
–––
–––
–––
–––
–––
140
130
640
–––
–––
–––
200
––– 0.008
––– 0.007
–––
–––
––– -100
–––
–––
7.5
87
10
96
110
–––
–––
130
300µs; duty cycle
–––
–––
–––
250
100
110
–––
–––
–––
–––
–––
310
1.3
420
25
27
39
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
Between lead,
6mm (0.25in.)
from package
and center of die contact
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
I
V
V
R
R
V
V
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 64A
= 64A
= 25°C, I
= 25°C, I
= 0.15
= 3.8
= V
= 10V, I
= 20V, V
= 10V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 7.0V, I
= -10V
= 10V
= 4.5V, See Fig. 6
= 10V
= 0V
2%.
GS
, I
D
V
S
F
D
D
Conditions
D
D
GS
= 250µA
GS
GS
Conditions
= 64A, V
= 64A
= 250µA
= 64A
= 64A
= 64A
= 4.5V
= 0V
= 0V, T
D
GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
D
D
S
)
S
D