IRF9520NS International Rectifier, IRF9520NS Datasheet - Page 3

• Manufacturer Part Number: IRF9520NS
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9520NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520NS

100
0.1
100
0.1
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics,
1
1
0.1
4
TOP
BOTTOM
-V
-V
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
5
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
6
-4.5V
7
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 175 C
10
8
J
= 10V
°
T = 25 C
J
°
9
°
100
10
100
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
Fig 2. Typical Output Characteristics,
TOP
BOTTOM
I =
D
Fig 4. Normalized On-Resistance
-V
-6.7A
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
IRF9520NS/L
20 40 60 80 100 120 140 160 180
Vs. Temperature
1
-4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
-10V
100