IRF7463 International Rectifier, IRF7463 Datasheet - Page 4

• Manufacturer Part Number: IRF7463
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7463

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3150pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7463

IRF7463
5000
4000
3000
2000
1000
4
0
1000
100
0.1
10
1
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V
SD
Forward Voltage
0.4
T = 150 C
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
J
Crss
Coss
°
Ciss
10
0.8
T = 25 C
J
f = 1 MHZ
°
1.2
V
SHORTED
GS
= 0 V
100
1.6
1000
100
10
1
10
0.1
8
6
4
2
0
Fig 8. Maximum Safe Operating Area
0
T
T
Single Pulse
I =
C
J
D
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
11A
V
Gate-to-Source Voltage
DS
°
10
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
1
20
BY R
DS(on)
V
V
FOR TEST CIRCUIT
30
SEE FIGURE
DS
DS
10
www.irf.com
= 24V
= 15V
40
10us
100us
1ms
10ms
13
100
50