IRL5602S International Rectifier, IRL5602S Datasheet - Page 2

• Manufacturer Part Number: IRL5602S
• Description: MOSFET P-CH 20V 24A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL5602S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL5602S; Q803261

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Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
Notes:
I
I
V
t
Q
t
V
DV
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
L
S
SM
rr
on
d(on)
d(off)
r
f
2
fs
S
For recommended footprint and soldering techniques refer to application note #AN-994.
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
rr
When mounted on FR-4 board using minimum recommended footprint.
g
gs
gd
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
Starting T
G
= 25W, I
/DT
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
= 25°C, L = 3.0mH
AS
= -14A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
„
ƒ
Pulse width £ 300µs; duty cycle £ 2%.
I
T
SD
––– -0.013 –––
–––
–––
–––
-0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
-20
–––
–––
–––
–––
12
–––
J
£ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
£ -12A, di/dt £ 120A/µs, V
1460 –––
–––
–––
–––
–––
––– 0.042
––– 0.062
––– 0.075
–––
–––
–––
––– -250
–––
––– -500
–––
–––
–––
7.5
790
370
9.7
58
54
73
53
84
-1.0
-1.4
–––
–––
500
–––
–––
–––
–––
–––
–––
–––
-25
8.7
-24
88
81
44
19
-96
V/°C
nC
nA
nC
ns
pF
W
V
V
S
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5…
integral reverse
D
D
J
J
DD
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -12A
= -12A
= 25°C, I
= 25°C, I
= 0.8W, See Fig. 10„…
= 6.0W, V
£ V
= V
= -15V, I
= -20V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.7V, I
= -2.5V, I
= -8.0V
= 8.0V
= -4.5V, See Fig. 6 and 13 „…
= -10 V
= 0V
(BR)DSS
GS
, I
D
S
F
D
Conditions
= -250µA
D
GS
= -12A, V
= -12A
Conditions
D
D
D
GS
GS
= -250µA
,
= -12A…
= -10A
= -10A
= -12A „
= 4.5V
= 0V
= 0V, T
D
www.irf.com
= -1mA…
GS
J
„
„
G
= 150°C
= 0V
S
+L
„
D
)
S
D