IRF7421D1 International Rectifier, IRF7421D1 Datasheet - Page 3

• Manufacturer Part Number: IRF7421D1
• Description: MOSFET N-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7421D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7421D1

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100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
3.5
V
GS
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
T = 25°C
J
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
3.0V
4.5
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
5.0
Power Mosfet Characteristics
= 10V
T = 150°C
J
5.5
6.0
10
A
A
100
100
10
10
1
1
0.1
0.4
TOP
BOTTOM 3.0V
Fig 4. Typical Source-Drain Diode
T = 150°C
J
V
V
DS
SD
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
0.8
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
Forward Voltage
T = 25°C
J
1.2
1
IRF7421D1
20µs PULSE WIDTH
T = 150°C
1.6
J
3.0V
2.0
V
GS
= 0V
3
2.4
10
A
A