IRFZ34E International Rectifier, IRFZ34E Datasheet - Page 4

• Manufacturer Part Number: IRFZ34E
• Description: MOSFET N-CH 60V 28A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ34E

IRFZ34E
1000
100
0.1
10
1200
1000
1
800
600
400
200
0.2
Fig 7. Typical Source-Drain Diode
0
T = 150 C
1
J
Fig 5. Typical Capacitance Vs.
V
Drain-to-Source Voltage
SD
V
°
DS
0.6
Forward Voltage
,Source-to-Drain Voltage (V)
C oss
C iss
C rss
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
T = 25 C
0V,
C
C
C
J
gs
gd
ds
1.0
+ C
+ C
10
°
f = 1MHz
gd ,
gd
C
ds
1.4
V
GS
SHORTED
= 0 V
1.8
100
1000
Fig 8. Maximum Safe Operating Area
100
10
20
15
10
1
5
0
Fig 6. Typical Gate Charge Vs.
0
1
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
17 A
V
5
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
10
BY R
15
DS(on)
FOR TEST CIRCUIT
V
V
SEE FIGURE
10us
100us
1ms
10ms
DS
DS
100
20
= 48V
= 30V
25
13
1000
30