IRF7201 International Rectifier, IRF7201 Datasheet

MOSFET N-CH 30V 7.3A 8-SOIC

IRF7201

Manufacturer Part Number
IRF7201
Description
MOSFET N-CH 30V 7.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7201

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7201

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Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
V
E
dv/dt
T
R
D
D
DM
J,
DS
D
D
GS
GSM
AS
θJA
@ T
@ T
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
@T
T
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
®
power MOSFETs from
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
S
S
S
1
2
3
4
Top View
Typ.
–––
HEXFET
8
6
5
7
-55 to + 150
Max.
0.02
± 20
7.3
5.8
2.5
1.6
5.0
30
58
30
70
D
D
D
D
A
A
SO-8
®
R
Power MOSFET
DS(on)
Max.
V
50
DSS
= 0.030Ω
= 30V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
V
A
V
V
1
08/15/03

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IRF7201 Summary of contents

Page 1

... Fast Switching ® Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

... IRF7201 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM 3. 0.1 Fig 2. Typical Output Characteristics 100 10V 0.1 A 0.4 5.0 5.5 Fig 4. Typical Source-Drain Diode IRF7201 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 150° 25°C J ...

Page 4

... IRF7201 2 4.6A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.05 0.04 0. 7. Gate-to-Source Voltage (V) GS Fig 7. On-Resistance Vs. Gate Voltage 4 0.20 0.15 0.10 0. 10V GS 0. 100 120 140 160 Fig 6. On-Resistance Vs. Drain Current 200 160 120 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com SHORTED 100 Fig 10. Typical Gate Charge Vs. 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7201 = 4. 24V 15V Total Gate Charge (nC) G Gate-to-Source Voltage Notes: 1. Duty factor Peak ...

Page 6

... IRF7201 SO-8 Package Details 0.25 (.010 0.25 (.010 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. ...

Page 7

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com FEED DIRECTION 330.00 (12.992) MAX. Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information.08/03 IRF7201 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 7 ...

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