IRF744PBF Vishay, IRF744PBF Datasheet

MOSFET N-CH 450V 8.8A TO-220AB

IRF744PBF

Manufacturer Part Number
IRF744PBF
Description
MOSFET N-CH 450V 8.8A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF744PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
630 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF744PBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91056
S-83029-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.8 A, dV/dt ≤ 200 A/µs, V
= 50 V, starting T
(Ω)
TO-220
a
J
G
= 25 °C, L = 12 mH, R
D
c
S
a
a
b
V
DD
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
Single
J
450
80
12
41
≤ 150 °C.
G
= 25 Ω I
D
S
C
Power MOSFET
0.63
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 8.8 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF744PbF
SiHF744-E3
IRF744
SiHF744
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
- 55 to + 150
IRF744, SiHF744
LIMIT
300
± 20
450
540
125
8.8
5.6
1.0
8.8
3.5
1.1
35
13
10
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRF744PBF Summary of contents

Page 1

... The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. N-Channel MOSFET TO-220 IRF744PbF SiHF744-E3 IRF744 SiHF744 = 25 °C, unless otherwise noted °C ...

Page 2

... IRF744, SiHF744 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... V Drain-to-Source Voltage ( 91056_02 Fig Typical Output Characteristics, T Document Number: 91056 S-83029-Rev. A, 19-Jan-09 4 °C C 91056_03 = 25 ° 150 °C C 91056_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF744, SiHF744 Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF744, SiHF744 Vishay Siliconix 3000 MHz iss gs 2500 rss oss ds 2000 C 1500 1000 C 500 Drain-to-Source Voltage ( 91056_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 225 Total Gate Charge (nC) 91056_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 91056_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91056 S-83029-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF744, SiHF744 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF744, SiHF744 Vishay Siliconix 91056_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 Top 1000 Bottom 800 600 400 200 125 100 Starting T , Junction Temperature (° 3.9 A 5.6 A 8.8 A 150 Current regulator Same type as D.U.T. ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91056. Document Number: 91056 S-83029-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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