IRF634NLPBF Vishay, IRF634NLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF634NLPBF
• Description: MOSFET N-CH 250V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF634NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF634NLPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
www.vishay.com
4
91033_03
91033_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
3.5
10
1
2
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
4.0
Fig. 3 - Typical Transfer Characteristics
I
V
T
D
GS
J
= 7.9 A
= 175
= 10 V
V
T
T
5.0
GS ,
J
J ,
°
= 25
C
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6.0
7.0
20 µs Pulse Width
V
DS
=
50 V
8.0
9.0
91033_05
91033_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1200
1000
800
600
400
200
20
16
12
0
8
4
0
1
0
I
D
= 4.8 A
C
C
C
iss
oss
rss
V
DS ,
V
Q
DS
10
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
= 50 V
10
DS
= 125 V
V
C
C
C
V
GS
iss
rss
oss
DS
20
= 0 V, f = 1 MHz
= C
= C
= C
= 200 V
gs
gd
ds
S-82999-Rev. A, 12-Jan-09
+ C
Document Number: 91033
+ C
10
2
gd
gd
For test circuit
see figure 13
, C
30
ds
Shorted
10
40
3