IRFB16N50K Vishay, IRFB16N50K Datasheet - Page 4

• Manufacturer Part Number: IRFB16N50K
• Description: MOSFET N-CH 500V 17A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB16N50K

• Mounting Type: Through Hole
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 280W
• Package / Case: TO-220-3 (Straight Leads)
• Thermal Resistance: 0.44°C/W
• Gate-to-drain Charge: 28nC
• Continuous Drain Current - 25 Deg C: 17A
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 350mohm
• Current Rating: 17A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB16N50K

IRFB16N50K, SiHFB16N50K
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100000
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
1
1
0
I D = 17A
V DS , Drain-to-Source Voltage (V)
10
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Q G Total Gate Charge (nC)
10
20
C iss
C rss
C oss
V DS = 400V
V DS = 250V
V DS = 100V
f = 1 MHZ
30
100
40
50
1000
60
100.00
10.00
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
1.00
0.10
100
0.1
10
1
Fig. 8 - Maximum Safe Operating Area
0.2
1
Tc = 25°C
Tj = 150°C
Single Pulse
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
10
0.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0.8
T J = 25°C
100
S09-0015-Rev. A, 19-Jan-09
1.0
Document Number: 91096
1.2
10msec
100µsec
1msec
1000
V GS = 0V
1.4
10000
1.6