IRFU4105ZTR Vishay, IRFU4105ZTR Datasheet - Page 3

• Manufacturer Part Number: IRFU4105ZTR
• Description: MOSFET N-CH 55V 30A I-PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFU4105ZTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
0
1
0.1
4
0
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
6
1
1
4.5V
7
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
10
10
8
9
100
100
10
1000
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
30
25
20
15
10
10
1
5
0
0.1
0
0
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
10
1
1
T J = 25°C
4.5V
T J = 175°C
V DS = 8.0V
380µs PULSE WIDTH
20
60µs PULSE WIDTH
Tj = 175°C
10
10
30
3
100
100
40