ZXM66N03N8TA Diodes Zetex, ZXM66N03N8TA Datasheet - Page 2

• Manufacturer Part Number: ZXM66N03N8TA
• Description: MOSFET N-CHAN HD 30V 8-SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXM66N03N8TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZXM66N03N8TR

THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ZXM66N03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Pulsed Source Current (Body Diode)(c)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
(V
GS
GS
=10V; T
=10V; T
A
A
=70°C)(b)(d)
=25°C)(b)(d)
SYMBOL
R
R
JA
JA
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
D
D
D
j
DSS
GS
:T
stg
DRAFT ISSUE A - AUGUST 2000
-55 to +150
VALUE
LIMIT
50
-
9.0
8.0
3.1
2.5
30
35
35
20
20
ADVANCED INFORMATION
-
-
-
-
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
°C
W
W
W
V
V
A
A
A
A