IRL530S Vishay, IRL530S Datasheet
IRL530S
Specifications of IRL530S
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IRL530S Summary of contents
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... ° 100 ° ° °C A for (see fig. 12 175 ° IRL530S, SiHL530S Vishay Siliconix Specified and device design, low on-resistance 2 PAK (TO-263) is suitable for high current 2 D PAK (TO-263) a SiHL530STRR-GE3 a IRL530STRRPbF a SiHL530STR- SYMBOL LIMIT V 100 ...
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... IRL530S, SiHL530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to Ambient (PCB Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91342 S10-2476-Rev. B, 01-Nov- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRL530S, SiHL530S Vishay Siliconix www.vishay.com 3 ...
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... IRL530S, SiHL530S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91342 S10-2476-Rev. B, 01-Nov-10 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91342 S10-2476-Rev. B, 01-Nov-10 IRL530S, SiHL530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRL530S, SiHL530S Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRL530S, SiHL530S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...