IRF630STRL Vishay, IRF630STRL Datasheet - Page 7

• Manufacturer Part Number: IRF630STRL
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRF630STRL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91032.
Document Number: 91032
S11-1047-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Re-applied
voltage
Reverse
recovery
current
+
-
R
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
This document is subject to change without notice.
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Fig. 14 - For N-Channel
Body diode forward
-
+
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
12 V
Fig. 13b - Gate Charge Test Circuit
V
V
I
V
SD
GS
GS
DD
Same type as D.U.T.
= 10 V
Current regulator
+
-
V
0.2 µF
DD
a
IRF630S, SiHF630S
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
www.vishay.com/doc?91000
Vishay Siliconix
D.U.T.
I
D
+
-
www.vishay.com
V
DS
7