IRFBC20S Vishay, IRFBC20S Datasheet - Page 6
IRFBC20S
Manufacturer Part Number
IRFBC20S
Description
MOSFET N-CH 600V 2.2A D2PAK
Manufacturer
Vishay
Datasheet
1.IRFBC20S.pdf
(8 pages)
Specifications of IRFBC20S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBC20S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC20S
Manufacturer:
IR
Quantity:
5 000
Company:
Part Number:
IRFBC20S
Manufacturer:
IR
Quantity:
12 500
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
www.vishay.com
6
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
10 V
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0045-Rev. A, 19-Jan-09
Document Number: 91107
D.U.T.
I
D
+
-
V
DS