IRF820AS Vishay, IRF820AS Datasheet - Page 3

• Manufacturer Part Number: IRF820AS
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF820AS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91058
S-83030-Rev. A, 19-Jan-09
91058_01
91058_02
10
0.1
0.1
10
10
-2
1
1
0.1
1
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
Bottom
Top
Top
Bottom
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
1
10
20 µs Pulse Width
T
20 µs Pulse Width
T
10
J
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
J
=
=
25 °C
150 °C
4.5 V
4.5 V
10
10
2
2
91058_03
91058_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-2
1
Fig. 3 - Typical Transfer Characteristics
- 60 - 40 - 20 0
4.0
I
V
T
D
GS
J
= 2.5 A
= 150
= 10 V
V
T
5.0
GS ,
J ,
°
T
C
Junction Temperature (°C)
J
Gate-to-Source Voltage (V)
= 25
20 40 60 80 100 120 140 160
6.0
°
C
Vishay Siliconix
7.0
20 µs Pulse Width
V
DS
=
50 V
8.0
www.vishay.com
9.0
3