IRLZ14S Vishay, IRLZ14S Datasheet - Page 5

• Manufacturer Part Number: IRLZ14S
• Description: MOSFET N-CH 60V 10A D2PAK
• Manufacturer: Vishay

Specifications of IRLZ14S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLZ14S

Document Number: 90414
S-82999-Rev. A, 12-Jan-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
5 V
V
GS
t
d(on)
V
DS
t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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