IRFS11N50A Vishay, IRFS11N50A Datasheet - Page 5

• Manufacturer Part Number: IRFS11N50A
• Description: MOSFET N-CH 500V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRFS11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFS11N50A

Document Number: 91286
S10-2326-Rev. B, 18-Oct-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
R
g
20 V
V
DS
t
p
I
AS
D.U.T.
0.01 Ω
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
15 V
Driver
+
- V
A
DD
IRFS11N50A, SiHFS11N50A
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
R
Vishay Siliconix
D
t
d(off)
V
DS
t
f
+
-
www.vishay.com
V
DD
5