IRFI744G Vishay, IRFI744G Datasheet

MOSFET N-CH 450V 4.9A TO220FP

IRFI744G

Manufacturer Part Number
IRFI744G
Description
MOSFET N-CH 450V 4.9A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI744G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
630 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Continuous Drain Current Id
4.9A
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
630mohm
Thermal Resistance
3.1°C/W
Current Rating
4.9A
Gate-to-drain Charge
27.3nC
Leaded Process Compatible
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFI744G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI744G
Manufacturer:
IR
Quantity:
12 500
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91157
S09-0012-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.8 A, dI/dt ≤ 200 A/µs, V
= 50 V, starting T
(Ω)
a
J
G
= 25 °C, L = 9.6 mH, R
D
c
a
a
S
b
DD
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
Single
J
450
≤ 150 °C.
80
12
41
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.63
GS
AS
6-32 or M3 screw
at 10 V
= 4.9 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI744GPbF
SiHFI744G-E3
IRFI744G
SiHFI744G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Dist. = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFI744G, SiHFI744G
design,
- 55 to + 150
LIMIT
300
± 20
0.32
450
130
4.9
3.1
4.9
4.0
3.5
1.1
20
40
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFI744G Summary of contents

Page 1

... TO-220 FULLPAK IRFI744GPbF SiHFI744G-E3 IRFI744G SiHFI744G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 4.9 A (see fig. 12 ≤ 150 ° IRFI744G, SiHFI744G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 450 DS V ± 4 3 0.32 E 130 ...

Page 2

... IRFI744G, SiHFI744G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91157 S09-0012-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI744G, SiHFI744G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI744G, SiHFI744G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91157 S09-0012-Rev. A, 19-Jan-09 ...

Page 5

... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91157 S09-0012-Rev. A, 19-Jan-09 IRFI744G, SiHFI744G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFI744G, SiHFI744G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91157 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFI744G, SiHFI744G Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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