IRF9Z14S Vishay, IRF9Z14S Datasheet - Page 5
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IRF9Z14S
Manufacturer Part Number
IRF9Z14S
Description
MOSFET P-CH 60V 6.7A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF9Z14S.pdf
(8 pages)
Specifications of IRF9Z14S
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9Z14S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9Z14S
Manufacturer:
IR
Quantity:
5 000
Document Number: 91089
S09-0071-Rev. A, 02-Feb-09
Vary t
required I
91089_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
7.5
6.0
4.5
3.0
1.5
0.0
AS
91089_11
25
R
- 10 V
G
10
0.1
10
V
-2
50
1
DS
10
T
C
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
t
, Case Temperature (°C)
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
100
0.01 Ω
L
10
-4
125
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Single Pulse
(Thermal Response)
150
+
-
10
175
V
t
1
-3
DD
, Rectangular Pulse Duration (s)
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
V
DS
Notes:
1. Duty Factor, D = t
2. Peak T
t
r
t
p
1
j
D.U.T.
= P
P
DM
R
DM
Vishay Siliconix
D
t
x Z
d(off)
V
t
1
1
DS
thJC
/t
2
t
t
f
+ T
2
+
-
www.vishay.com
C
V
V
10
DD
DD
5