IRF9540S Vishay, IRF9540S Datasheet - Page 6

• Manufacturer Part Number: IRF9540S
• Description: MOSFET P-CH 100V 19A D2PAK
• Manufacturer: Vishay

Specifications of IRF9540S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9540S

IRF9540S, SiHF9540S
Vishay Siliconix
www.vishay.com
6
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
Q
GS
GS
V
DS
Charge
Q
Q
GD
G
D.U.T.
R
D
91079_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
2000
1600
1200
-
+
800
400
V
DD
0
25
V
DD
Starting T
= - 25 V
50
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
12 V
V
I
V
Fig. 13b - Gate Charge Test Circuit
AS
150
DS
GS
Same type as D.U.T.
- 7.8 A
- 13 A
- 19 A
Current regulator
I
D
0.2 µF
175
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S09-0046-Rev. A, 19-Jan-09
Document Number: 91079
D.U.T.
I
D
V
DS
+
-
V
DS
V
DD