IRF840L Vishay, IRF840L Datasheet - Page 4

• Manufacturer Part Number: IRF840L
• Description: MOSFET N-CH 500V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF840L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840L

IRF840L, SiHF840L
Vishay Siliconix
www.vishay.com
4
91069_05
91069_06
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
2500
2000
1500
1000
500
20
16
12
0
8
4
0
10
0
0
I
D
= 8.0 A
V
DS ,
15
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= 100 V
V
30
V
C
C
C
DS
GS
iss
rss
oss
= 250 V
= C
= 0 V, f = 1 MHz
= C
= C
V
DS
10
gs
gd
ds
45
C
= 400 V
1
+ C
C
+ C
rss
C
oss
iss
gd
gd
, C
For test circuit
see figure 13
ds
60
Shorted
75
91069_08
91069_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
1
2
5
2
5
2
5
2
0
1
0.1
0.4
Fig. 8 - Maximum Safe Operating Area
150
2
5
V
°
V
C
DS
0.6
SD
1
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
2
5
10
0.8
T
T
Single Pulse
by R
C
J
25
= 150 °C
2
= 25 °C
DS(on)
°
C
5
10
1.0
S-83030-Rev. A, 19-Jan-09
Document Number: 91069
2
2
5
10
100
1
10
10
1.2
ms
V
µs
ms
3
GS
µs
2
= 0 V
5
10
1.4
4