IRF640S Vishay, IRF640S Datasheet - Page 3

• Manufacturer Part Number: IRF640S
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF640S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
J
Fig. 2 - Typical Output Characteristics, T
= 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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Document Number: 91037
www.vishay.com
S-81241-Rev. A, 07-Jul-08
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