BS170 Diodes Inc, BS170 Datasheet - Page 2

• Manufacturer Part Number: BS170
• Description: MOSFET N-CH 60V 300MA TO92-3
• Manufacturer: Diodes Inc

Specifications of BS170

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BS170DI; BS170DITB

DS21802 Rev. D-3
500
300
400
200
100
500
400
300
200
100
0.8
0.4
0.6
0.2
0
1
0
0
0
0
0
Fig. 5. Transconductance vs Gate-Source Voltage
Pulse test width 80µs;
pulse duty factor 1%
T , AMBIENT TEMPERATURE (ºC)
A
2
V , GATE-SOURCE VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1. Power Derating Curve
2
GS
DS
Fig. 3. Saturation Characteristics
4
4
Pulse test width 80µs;
pulse duty factor 1%
100
6
6
(See Note 1)
V
GS
3.5V
= 5V
4.0V
3.0V
4.5V
V
8
8
DS
T = 25°C
A
= 10V
200
10
10
2 of 2
500
400
200
300
100
0.8
0.4
0.6
0.2
0.1
0.8
0.6
1.0
0.4
0.2
1
0
0
0
0
0
Pulse test width 80µs;
pulse duty factor 1%
Fig. 4. Drain Current vs Gate-Source Voltage
7V
Pulse test width 80µs;
pulse duty factor 1%
Fig. 6 Transconductance vs. Drain Current
100
V , DRAIN-SOURCE VOLTAGE (V)
20
V
2
DS
GS
Fig. 2. Output Characteristics
, GATE-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (mA)
D
Pulse test width 80µs;
pulse duty factor 1%
200
40
4
300
60
6
V
GS
5V
4V
3V
= 6V
V
V
400
T = 25°C
T = 25°C
DS
80
DS
A
8
A
= 10V
= 10V
BS170
100
10
500