IRF830S Vishay, IRF830S Datasheet - Page 4

• Manufacturer Part Number: IRF830S
• Description: MOSFET N-CH 500V 4.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830S

IRF830S, SiHF830S
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91064_06
91064_05
1500
1250
1000
750
500
250
20
16
12
0
8
4
0
10
0
0
I
D
= 3.1 A
V
DS ,
8
Q
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= 100 V
V
DS
16
V
C
C
C
= 250 V
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
= C
DS
10
gs
gd
24
ds
= 400 V
1
+ C
C
C
C
+ C
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
32
ds
Shorted
40
Fig. 7 - Typical Source-Drain Diode Forward Voltage
91064_07
91064_08
10
10
10
10
Fig. 8 - Maximum Safe Operating Area
0.1
10
-2
0
1
1
2
5
2
5
2
5
2
5
2
0.4
0.1
2
V
V
5
SD
DS
1
150
, Source-to-Drain Voltage (V)
Operation in this area limited
0.6
, Drain-to-Source Voltage (V)
2
°
C
5
T
T
Single Pulse
C
J
10
= 150 °C
by R
= 25 °C
2
0.8
25
DS(on)
S-83030-Rev. A, 19-Jan-09
Document Number: 91064
5
°
C
10
2
2
1.0
5
10
100
1
10
10
V
ms
GS
µs
ms
3
µs
2
= 0 V
5
1.2
10
4