IRFP048 Vishay, IRFP048 Datasheet - Page 6

• Manufacturer Part Number: IRFP048
• Description: MOSFET N-CH 60V 70A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP048

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFP048, SiHFP048
Vishay Siliconix
www.vishay.com
6
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
p
10 V
Fig. 13a - Basic Gate Charge Waveform
to obtain
V
G
AS
R
10 V
Q
G
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
A
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S09-0009-Rev. A, 19-Jan-09
Document Number: 91198
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS