2N7000P Diodes Zetex, 2N7000P Datasheet

MOSFET N-CH FET 60V 0.2A TO92-3

2N7000P

Manufacturer Part Number

2N7000P

Description

MOSFET N-CH FET 60V 0.2A TO92-3

Manufacturer

Diodes Zetex

Datasheet

1.2N7000P.pdf (1 pages)

Specifications of 2N7000P

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

200mA

Vgs(th) (max) @ Id

3V @ 1mA

Input Capacitance (ciss) @ Vds

60pF @ 25V

Power - Max

400mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Gate Charge (qg) @ Vgs

-

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N-CHANNEL

ISSUE

MODE VERTICAL DMOS FET

FEATURES

*

*R

ABSOLUTE MAXIMUM

—-

—-

——-.—

——. .——. ———

‘Reve;se

1)Switching

TurmOn

PARAMETER

Drain-Source

Continuous

Pulsed

Gate-Source

Power

Operating

PARAMETER

Voltage

Gate-Source

Zero Gate Voltege

Static

Common

Capacitance

Turn-Off

) Measured

Drain-Source

Gate-Body

On-State

Static Drain-Source

Voltage

Resistance

input

60 Volt VcEo

0S(0.)

———.

2-

Capacitance

Drain-Source

Dissipation

Drain Current–-

(1)

Transfer

MARCH

Time (2)(3)

Time (2)(3)

= 5 ‘2

Drain Current(1)

Source

and Storage

—.—

Leakage

(1)

times

under

Drain Current

(2)

Voltage

Threshold

Voltage

—. —-—

Breakdown

— .——

Output

Capacitance

94

measured

pulsed

at Tamb=250C

.——

(2)

ENHANCEMENT

Drain Current

__, _

On-State

On-State

~~

—

Temperature

Voltage

AL-P–E.-.;

conditions.

at Tamb=250C

RATINGS.

with 50Q source

(2)

1

‘(on)

Voff)

SYMBOL

‘GS(th)

‘DS(on)

RDs&

c

c,,,

BVDss

lGSS

lD~s

ID(m)

0ss

Range

Width=300ps.

——

q+f

~

~

_ 0.8

impedance

MIN.

60

75

3-13

‘DS

‘GS

Ti:T~tg

SYMBOL

ID

lDM

P

Duty cycle <2%

I

tot

MAX.

3

2.5

0.4

5

25

5

10

1

1

10

10

T

——+—

and <5ns rise time on a pulse generator

I

1’

‘;

v

pF

UNIT

v

UA

mA

mA

V -

v

pF

ns

ns

nA--

— --–—

—

—

—

“-

-4

-1

~

\ VDD=15V,

I

(2) Sample

vG@

VDs48V,

VDSIOV,

VGs.=10V,lD.500mA

;;~;;;$;%--–

VD-725V,

---–-

CONDITIONS.

ID=l OIA, VGsOV

lD=lmA,

VD~48V,

Rg=25Q, RL=25Q

-55to

- ‘“

v

lJ&h!sJ

VALUE

’500

2A.

i 40

200

60

—

15V,

2N7000P

+150

VD=

VGs:OV,

VG~O

VG~OV,

VGF4.5V

test.

D

lD=500mA

vD~=ov

G

s

~

\

VGs

——

‘–

.—

f= 1MHz

T=125°C(2)

———

UNIT

mW

mA

mA

“c

v

v

“,..

. .

.-

~

I

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