IRF640 Vishay, IRF640 Datasheet - Page 4
![MOSFET N-CH 200V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF640
Manufacturer Part Number
IRF640
Description
MOSFET N-CH 200V 18A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet
1.IRF640.pdf
(8 pages)
Specifications of IRF640
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
18A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Power Dissipation
125W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
IRF640IR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF640
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
IRF640-TSTU
Manufacturer:
SAMSUNG
Quantity:
467
Company:
Part Number:
IRF640A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF640B
Manufacturer:
N/A
Quantity:
20 000
IRF640, SiHF640
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91036
S-81241-Rev. A, 07-Jul-08