IRF630 Vishay, IRF630 Datasheet - Page 6
![MOSFET N-CH 200V 9A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF630
Manufacturer Part Number
IRF630
Description
MOSFET N-CH 200V 9A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF630.pdf
(8 pages)
Specifications of IRF630
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF630
Manufacturer:
SEC
Quantity:
20 000
Part Number:
IRF630(HJ)
Manufacturer:
华晶
Quantity:
20 000
Part Number:
IRF630A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
IRF630B
Manufacturer:
DIODES
Quantity:
20 000
Company:
Part Number:
IRF630B
Manufacturer:
Fairchi/ON
Quantity:
52 000
Part Number:
IRF630B
Manufacturer:
FSC
Quantity:
20 000
IRF630, SiHF630
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-81240-Rev. A, 16-Jun-08
Document Number: 91031
D.U.T.
I
D
+
-
V
DS