NTP35N15G ON Semiconductor, NTP35N15G Datasheet - Page 7

MOSFET N-CHAN 37A 150V TO220AB

NTP35N15G

Manufacturer Part Number
NTP35N15G
Description
MOSFET N-CHAN 37A 150V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTP35N15G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 18.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
3200pF @ 25V
Power - Max
178W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Power Dissipation
178000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTP35N15G
Manufacturer:
ON
Quantity:
12 500
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
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PACKAGE DIMENSIONS
USA/Canada
Phone: 421 33 790 2910
Phone: 81−3−5773−3850
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http://onsemi.com
CASE 221A−09
C
ISSUE AF
−T−
TO−220
7
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 5:
DIM
A
B
C
D
G
H
K
N
Q
R
S
U
V
F
J
L
T
Z
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.570
0.380
0.160
0.025
0.142
0.095
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.110
MIN
---
INCHES
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
---
14.48
12.70
MILLIMETERS
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
15.75
10.28
14.27
MAX
4.82
0.88
4.09
2.66
3.93
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
---
NTP35N15/D

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